FZT796ATA

FZT796ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-FZT796ATA
  • Package: TO-261-4, TO-261AA
  • Datasheet: pdf
  • Stock: 2269
  • Description: FZT796ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -200V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FZT796
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 20mA, 200mA
Collector Emitter Breakdown Voltage 200V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 200V
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -500mA
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FZT796ATA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 10mA 10V.A collector emitter saturation voltage of -300mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 20mA, 200mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.The emitter base voltage can be kept at -5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 100MHz.Single BJT transistor can take a breakdown input voltage of 200V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

FZT796ATA Features


the DC current gain for this device is 300 @ 10mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 20mA, 200mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 100MHz

FZT796ATA Applications


There are a lot of Diodes Incorporated FZT796ATA applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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