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FZT749 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FZT749
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 6843
- Description: FZT749 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 188mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -25V |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -3A |
| Frequency | 100MHz |
| Base Part Number | FZT749 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 300mA, 3A |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | -35V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Height | 1.7mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
FZT749 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 1A 2V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 300mA, 3A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.100MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 25V volts.A maximum collector current of 3A volts can be achieved.
FZT749 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz
FZT749 Applications
There are a lot of ON Semiconductor FZT749 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
