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FZT657TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FZT657TA
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 4074
- Description: FZT657TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Max Breakdown Voltage | 300V |
| Collector Base Voltage (VCBO) | 300V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Voltage - Rated DC | 300V |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 500mA |
| Frequency | 30MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FZT657 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 300V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | 500mV |
FZT657TA Overview
In this device, the DC current gain is 50 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.The part has a transition frequency of 30MHz.Breakdown input voltage is 300V volts.The maximum collector current is 500mA volts.
FZT657TA Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz
FZT657TA Applications
There are a lot of Diodes Incorporated FZT657TA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
