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FZT655TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FZT655TA
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 3278
- Description: FZT655TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 150V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 150V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | 180mV |
| Max Breakdown Voltage | 150V |
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 1A |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 150V |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1A |
| Frequency | 30MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FZT655 |
| Number of Elements | 1 |
| Voltage | 150V |
| Element Configuration | Single |
| Current | 1A |
FZT655TA Overview
This device has a DC current gain of 50 @ 500mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.When VCE saturation is 500mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).A 1A continuous collector voltage is necessary to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In the part, the transition frequency is 30MHz.Input voltage breakdown is available at 150V volts.Maximum collector currents can be below 1A volts.
FZT655TA Features
the DC current gain for this device is 50 @ 500mA 5V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 30MHz
FZT655TA Applications
There are a lot of Diodes Incorporated FZT655TA applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
