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FZT653TA
  • FZT653TA

FZT653TA

FZT653TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-FZT653TA
  • Package: TO-261-4, TO-261AA
  • Datasheet: pdf
  • Stock: 644
  • Description: FZT653TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Factory Lead Time 15 Weeks
Mount Surface Mount
Packaging Cut Tape (CT)
Published 2013
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Length 6.7mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Current Rating 2A
Radiation Hardening No
Number of Pins 4
Package / Case TO-261-4, TO-261AA
REACH SVHC No SVHC
Frequency 175MHz
Height 1.65mm
Width 3.7mm
Mounting Type Surface Mount
Weight 7.994566mg
Operating Temperature -55°C~150°C TJ
Voltage - Rated DC 100V
Current 2A
JESD-609 Code e3
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number FZT653
Subcategory Other Transistors
Max Power Dissipation 2W
Voltage 100V
Number of Elements 1
Case Connection COLLECTOR
Gain Bandwidth Product 175MHz
Polarity/Channel Type NPN
Element Configuration Single
Power Dissipation 2W
Max Breakdown Voltage 100V
Max Collector Current 2A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Voltage (VCEO) 100V
Transistor Application SWITCHING
Transistor Element Material SILICON
Transistor Type NPN
Transition Frequency 175MHz
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Saturation Voltage 230mV
Continuous Collector Current 2A
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V

FZT653TA Overview


This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 230mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 175MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.In extreme cases, the collector current can be as low as 2A volts.

FZT653TA Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 175MHz

FZT653TA Applications


There are a lot of Diodes Incorporated FZT653TA applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter
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