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FZT649TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FZT649TA
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 2309
- Description: FZT649TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Current Rating | 3A |
| Frequency | 240MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FZT649 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Voltage | 25V |
| Element Configuration | Single |
| Current | 3A |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 240MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 300mA, 3A |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 240MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | 35V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 3A |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FZT649TA Overview
This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.In the part, the transition frequency is 240MHz.An input voltage of 25V volts is the breakdown voltage.A maximum collector current of 3A volts can be achieved.
FZT649TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 240MHz
FZT649TA Applications
There are a lot of Diodes Incorporated FZT649TA applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
