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FZT603TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FZT603TA
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 1867
- Description: FZT603TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FZT603 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 1.13V @ 20mA, 2A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 1.13V |
| Max Breakdown Voltage | 80V |
| Frequency - Transition | 150MHz |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 10V |
| Continuous Collector Current | 2A |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FZT603TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 5000 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.13V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.13V @ 20mA, 2A.A constant collector voltage of 2A is necessary for high efficiency.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.The part has a transition frequency of 150MHz.As a result, it can handle voltages as low as 80V volts.In extreme cases, the collector current can be as low as 2A volts.
FZT603TA Features
the DC current gain for this device is 5000 @ 500mA 5V
a collector emitter saturation voltage of 1.13V
the vce saturation(Max) is 1.13V @ 20mA, 2A
the emitter base voltage is kept at 10V
the current rating of this device is 2A
a transition frequency of 150MHz
FZT603TA Applications
There are a lot of Diodes Incorporated FZT603TA applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
