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FZT458TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FZT458TA
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 727
- Description: FZT458TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 300mA |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FZT458 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Voltage | 400V |
| Element Configuration | Single |
| Current | 3A |
| Power Dissipation | 3W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 300mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 6mA, 50mA |
| Collector Emitter Breakdown Voltage | 400V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 400V |
| Collector Base Voltage (VCBO) | 400V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 300mA |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FZT458TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 50mA 10V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 300mA current rating.In this part, there is a transition frequency of 50MHz.This device can take an input voltage of 400V volts before it breaks down.In extreme cases, the collector current can be as low as 300mA volts.
FZT458TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz
FZT458TA Applications
There are a lot of Diodes Incorporated FZT458TA applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
