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FZT1147ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FZT1147ATA
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 2956
- Description: FZT1147ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | -12V |
| Max Power Dissipation | 2.5W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -5A |
| Frequency | 115MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2.5W |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 115MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 5A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 115MHz |
| Collector Emitter Saturation Voltage | -250mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 15V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -5A |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FZT1147ATA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 5A.Continuous collector voltages should be kept at -5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -5A current rating.A transition frequency of 115MHz is present in the part.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 5A volts is possible.
FZT1147ATA Features
the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 50mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -5A
a transition frequency of 115MHz
FZT1147ATA Applications
There are a lot of Diodes Incorporated FZT1147ATA applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
