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ContactFZ1200R17HP4B2BOSA1
FZ1200R17HP4B2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available at Utmel
- Manufacturer: Infineon Technologies AG
- NO: 376-FZ1200R17HP4B2BOSA1
- Package: -
- Datasheet:
- Stock: 1051
- Description: FZ1200R17HP4B2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available at Utmel(Kg)
- Delivery:
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| Parameters | |
|---|---|
| ECCN (US) | EAR99 |
| Maximum Collector-Emitter Voltage (V) | 1700 |
| Typical Collector Emitter Saturation Voltage (V) | 1.9 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Power Dissipation (mW) | 8600000 |
| Maximum Continuous Collector Current (A) | 1200 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 150 |
| Military | No |
| Mounting | Screw |
| Package Length | 140 |
| Package Width | 130 |
| PCB changed | 7 |
| Packaging | Tray |
| Part Status | Unconfirmed |
| Technology | Trench |
| Pin Count | 7 |
| Configuration | Dual |
| Channel Type | N |
| RoHS Status | Yes with exemptions |
