FW216A-TL-2W

MOSFET 2N-CH 35V 4.5A 8SOIC


  • Manufacturer: ON Semiconductor
  • NO: 598-FW216A-TL-2W
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 4590
  • Description: MOSFET 2N-CH 35V 4.5A 8SOIC(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2.2W
Terminal Form GULL WING
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 64m Ω @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 35V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.064Ohm
DS Breakdown Voltage-Min 35V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 4V Drive
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

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