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FS450R12KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-FS450R12KE3BOSA1
- Package: Module
- Datasheet:
- Stock: 634
- Description: FS450R12KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Screw |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 29 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C TJ |
| Published | 2002 |
| Pbfree Code | no |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 29 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 2.1kW |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 29 |
| Qualification Status | Not Qualified |
| Number of Elements | 6 |
| Configuration | Three Phase Inverter |
| Power Dissipation | 2.1kW |
| Case Connection | ISOLATED |
| Power - Max | 2100W |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 600A |
| Current - Collector Cutoff (Max) | 5mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.15V |
| Turn On Time | 400 ns |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 450A |
| Turn Off Time-Nom (toff) | 810 ns |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | Yes |
| Input Capacitance (Cies) @ Vce | 32nF @ 25V |
| Height | 17mm |
| Length | 162mm |
| Width | 150mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
FS450R12KE3BOSA1 Description
FS450R12KE3BOSA1 is a 1200v -EconoPACK+ with trench/fieldstop IGBT3 and Emitter Controlled High-Efficiency diode. The FS450R12KE3BOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Communications equipment, Wireless infrastructure, Enterprise systems, and Enterprise projectors due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FS450R12KE3BOSA1 is in the tray package with 2100W Power dissipation.
FS450R12KE3BOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 600A
Repetitive peak collector current Tp = 1 ms: 900A
Total power dissipation Tc = 25°C: 2100W
Gate-emitter peak voltage: ±20V
FS450R12KE3BOSA1 Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Wireless infrastructure
Enterprise systems
Enterprise projectors
