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FS150R12KT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-FS150R12KT4BOSA1
- Package: Module
- Datasheet:
- Stock: 1640
- Description: FS150R12KT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2002 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 35 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 35 |
| JESD-30 Code | R-XUFM-X35 |
| Qualification Status | Not Qualified |
| Number of Elements | 6 |
| Configuration | Three Phase Inverter |
| Case Connection | ISOLATED |
| Power - Max | 750W |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Current - Collector Cutoff (Max) | 1mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 150A |
| Power Dissipation-Max (Abs) | 750W |
| Turn On Time | 165 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 150A |
| Turn Off Time-Nom (toff) | 605 ns |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| VCEsat-Max | 2.1 V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
FS150R12KT4BOSA1 Description
FS150R12KT4BOSA1 developed by Infineon Technologies is a type of EconoPACK?3 module PressFIT with trench/fieldstop IGBT4 and emitter controlled4 diode. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.
FS150R12KT4BOSA1 Features
Energy saving
Easy installation and maintenance
Stable heat dissipation
High efficiency diode
FS150R12KT4BOSA1 Applications
Rail transit
Smart grid
Aerospace
Electric vehicles
New energy equipment
