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FP15R12W1T4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-FP15R12W1T4BOMA1
- Package: Module
- Datasheet:
- Stock: 1287
- Description: FP15R12W1T4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| IGBT Type | Trench Field Stop |
| NTC Thermistor | Yes |
| Input Capacitance (Cies) @ Vce | 890pF @ 25V |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 16 Weeks |
| Mount | Screw |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 23 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C |
| Published | 2002 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 23 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 130W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 23 |
| Qualification Status | Not Qualified |
| Number of Elements | 7 |
| Configuration | Three Phase Inverter |
| Case Connection | ISOLATED |
| Power - Max | 130W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 28A |
| Current - Collector Cutoff (Max) | 1mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 1.85V |
| Turn On Time | 120 ns |
| Vce(on) (Max) @ Vge, Ic | 2.25V @ 15V, 15A |
| Turn Off Time-Nom (toff) | 495 ns |
FP15R12W1T4BOMA1 Description
FP15R12W1T4BOMA1 is a 1200v IGBT. The Infineon FP15R12W1T4BOMA1 can be applied in auxiliary inverters, air conditioning, motor drives, and automotive applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FP15R12W1T4BOMA1 is in the Tray package with 130W power dissipation.
FP15R12W1T4BOMA1 Features
Low Switching Losses
Trench IGBT 4
VcEsat with a positive Temperature Coefficient
Low VCEsat
Al2O3 Substrate with Low Thermal Resistance
Compact design
Solder Contact Technology
Rugged mounting due to integrated mounting clamps
FP15R12W1T4BOMA1 Applications
Auxiliary Inverters
Air Conditioning
Motor Drives
Automotive
Hybrid, electric & powertrain systems
Industrial
