FMMTA92TA

FMMTA92TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-FMMTA92TA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 5182
  • Description: FMMTA92TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -200mA
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC -300V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FMMTA92
Reference Standard CECC50002-245
Number of Elements 1
Voltage 300V
Element Configuration Single
Current 200mA
Power Dissipation 330mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA 10V
Current - Collector Cutoff (Max) 250nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 300V

FMMTA92TA Overview


This device has a DC current gain of 25 @ 30mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of -200mA is necessary for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -200mA.The part has a transition frequency of 50MHz.This device can take an input voltage of 300V volts before it breaks down.During maximum operation, collector current can be as low as 200mA volts.

FMMTA92TA Features


the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 50MHz

FMMTA92TA Applications


There are a lot of Diodes Incorporated FMMTA92TA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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