FMMTA14TA

FMMTA14TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-FMMTA14TA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 4720
  • Description: FMMTA14TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 300mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FMMTA14
Pin Count 3
Reference Standard CECC
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 330mW
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 900mV @ 100μA, 100mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 900mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000
Continuous Collector Current 300mA
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FMMTA14TA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 900mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 900mV @ 100μA, 100mA.Continuous collector voltages should be kept at 300mA to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).Parts of this part have transition frequencies of 100MHz.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 300mA volts.

FMMTA14TA Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 100MHz

FMMTA14TA Applications


There are a lot of Diodes Incorporated FMMTA14TA applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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