FMMTA06TA

FMMTA06TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-FMMTA06TA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 7270
  • Description: FMMTA06TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FMMTA06
Pin Count 3
Reference Standard CECC50002-240
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 330mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 4V
Continuous Collector Current 500mA
Height 1mm
Length 3.05mm
Width 1.4mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FMMTA06TA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 10mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.With the emitter base voltage set at 4V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.The part has a transition frequency of 100MHz.There is a breakdown input voltage of 80V volts that it can take.During maximum operation, collector current can be as low as 500mA volts.

FMMTA06TA Features


the DC current gain for this device is 50 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz

FMMTA06TA Applications


There are a lot of Diodes Incorporated FMMTA06TA applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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