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FMMT723TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FMMT723TA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3874
- Description: FMMT723TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Length | 3.05mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Voltage - Rated DC | -100V |
| Max Power Dissipation | 625mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1A |
| Frequency | 200MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FMMT723 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | -100V |
| Max Collector Current | -1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 330mV @ 150mA, 1A |
| Collector Emitter Breakdown Voltage | -160V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | -210mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | -100V |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 250 |
| Max Junction Temperature (Tj) | 150°C |
| Continuous Collector Current | -1A |
| Height | 1.1mm |
FMMT723TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 500mA 10V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of -210mV.A VCE saturation (Max) of 330mV @ 150mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1A to achieve high efficiency.Keeping the emitter base voltage at -7V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.As a result, the part has a transition frequency of 200MHz.The breakdown input voltage is 100V volts.During maximum operation, collector current can be as low as -1A volts.
FMMT723TA Features
the DC current gain for this device is 250 @ 500mA 10V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 330mV @ 150mA, 1A
the emitter base voltage is kept at -7V
the current rating of this device is -1A
a transition frequency of 200MHz
FMMT723TA Applications
There are a lot of Diodes Incorporated FMMT723TA applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
