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FMMT722TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FMMT722TA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1148
- Description: FMMT722TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -70V |
| Max Power Dissipation | 625mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1.5A |
| Frequency | 200MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FMMT722 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 70V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 200mA, 1.5A |
| Collector Emitter Breakdown Voltage | 70V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | -175mV |
| Max Breakdown Voltage | 70V |
| Collector Base Voltage (VCBO) | 70V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -1.5A |
| Height | 1mm |
| Length | 3.05mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FMMT722TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -175mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of -1.5A is necessary for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.There is a breakdown input voltage of 70V volts that it can take.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
FMMT722TA Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -175mV
the vce saturation(Max) is 260mV @ 200mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 200MHz
FMMT722TA Applications
There are a lot of Diodes Incorporated FMMT722TA applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
