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FMMT717TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FMMT717TA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3922
- Description: FMMT717TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -12V |
| Max Power Dissipation | 625mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -2.5A |
| Frequency | 110MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FMMT717 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 110MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 2.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 50mA, 2.5A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 110MHz |
| Collector Emitter Saturation Voltage | -180mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 12V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -2.5A |
| Height | 1mm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FMMT717TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 2V.The collector emitter saturation voltage is -180mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at -2.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2.5A.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.Single BJT transistor can be broken down at a voltage of 12V volts.In extreme cases, the collector current can be as low as 2.5A volts.
FMMT717TA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 220mV @ 50mA, 2.5A
the emitter base voltage is kept at 5V
the current rating of this device is -2.5A
a transition frequency of 110MHz
FMMT717TA Applications
There are a lot of Diodes Incorporated FMMT717TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
