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FMMT596TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FMMT596TA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2556
- Description: FMMT596TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -200V |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -500mA |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FMMT596 |
| Number of Elements | 1 |
| Voltage | 200V |
| Element Configuration | Single |
| Current | 3A |
| Power Dissipation | 500mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 200V |
| Max Collector Current | 300mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 250mA 10V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 25mA, 250mA |
| Collector Emitter Breakdown Voltage | 200V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | -350mV |
| Max Breakdown Voltage | 200V |
| Collector Base Voltage (VCBO) | 220V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -300mA |
| Height | 1.02mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FMMT596TA Overview
In this device, the DC current gain is 85 @ 250mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -350mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 25mA, 250mA.Single BJT transistor is recommended to keep the continuous collector voltage at -300mA in order to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.Parts of this part have transition frequencies of 150MHz.An input voltage of 200V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 300mA volts.
FMMT596TA Features
the DC current gain for this device is 85 @ 250mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 25mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 150MHz
FMMT596TA Applications
There are a lot of Diodes Incorporated FMMT596TA applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
