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FMMT593TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FMMT593TA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 6731
- Description: FMMT593TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | -100V |
| Max Collector Current | -1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | -100V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -300mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | -120V |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 100 |
| Max Junction Temperature (Tj) | 150°C |
| Continuous Collector Current | -1A |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 1997 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -100V |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1A |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FMMT593 |
| Number of Elements | 1 |
| Voltage | 100V |
| Element Configuration | Single |
| Current | 1A |
| Power Dissipation | 500mW |
| Transistor Application | SWITCHING |
FMMT593TA Overview
DC current gain in this device equals 100 @ 500mA 5V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 50mA, 500mA.Maintaining the continuous collector voltage at -1A is essential for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can be broken down at a voltage of 100V volts.Single BJT transistor is possible to have a collector current as low as -1A volts at Single BJT transistors maximum.
FMMT593TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at -7V
the current rating of this device is -1A
a transition frequency of 50MHz
FMMT593TA Applications
There are a lot of Diodes Incorporated FMMT593TA applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
