FMMT560TA

FMMT560TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-FMMT560TA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 3295
  • Description: FMMT560TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -500V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Frequency 60MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number FMMT560
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Gain Bandwidth Product 60MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 50mA
Collector Emitter Breakdown Voltage 500V
Transition Frequency 60MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 500V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -150mA
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FMMT560TA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 50mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.When VCE saturation is 500mV @ 10mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages of -150mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.As you can see, the part has a transition frequency of 60MHz.There is a breakdown input voltage of 500V volts that it can take.A maximum collector current of 150mA volts can be achieved.

FMMT560TA Features


the DC current gain for this device is 80 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 60MHz

FMMT560TA Applications


There are a lot of Diodes Incorporated FMMT560TA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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