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FMMT558TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FMMT558TA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1865
- Description: FMMT558TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -400V |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -150mA |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FMMT558 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 6mA, 50mA |
| Collector Emitter Breakdown Voltage | 400V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Max Breakdown Voltage | 400V |
| Collector Base Voltage (VCBO) | 400V |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -150mA |
| Turn On Time-Max (ton) | 95ns |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FMMT558TA Overview
This device has a DC current gain of 100 @ 50mA 10V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 6mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -150mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -150mA for this device.In this part, there is a transition frequency of 50MHz.Single BJT transistor can be broken down at a voltage of 400V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
FMMT558TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 50MHz
FMMT558TA Applications
There are a lot of Diodes Incorporated FMMT558TA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
