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FMMT494QTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FMMT494QTA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 8006
- Description: FMMT494QTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 100MHz |
| Frequency - Transition | 100MHz |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 500mW |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 250mA 10V |
FMMT494QTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 250mA 10V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As a result, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 120VV - Maximum voltage.
FMMT494QTA Features
the DC current gain for this device is 100 @ 250mA 10V
the vce saturation(Max) is 300mV @ 50mA, 500mA
a transition frequency of 100MHz
FMMT494QTA Applications
There are a lot of Diodes Incorporated FMMT494QTA applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
