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FMMT449 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FMMT449
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2859
- Description: FMMT449 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | LIFETIME (Last Updated: 6 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 1A |
| Frequency | 150MHz |
| Base Part Number | FMMT449 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 1V |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Height | 940μm |
| Length | 2.92mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FMMT449 Overview
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 150MHz.There is a breakdown input voltage of 30V volts that it can take.A maximum collector current of 1A volts can be achieved.
FMMT449 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FMMT449 Applications
There are a lot of ON Semiconductor FMMT449 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
