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FMMT417TD datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FMMT417TD
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 9960
- Description: FMMT417TD datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 330mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 500mA |
| Frequency | 40MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FMMT417 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 330mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 40MHz |
| Transistor Type | NPN - Avalanche Mode |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 40MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 320V |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 500mA |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FMMT417TD Overview
In this device, the DC current gain is 25 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltage should be kept at 500mA for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.A transition frequency of 40MHz is present in the part.Breakdown input voltage is 100V volts.A maximum collector current of 500mA volts can be achieved.
FMMT417TD Features
the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
FMMT417TD Applications
There are a lot of Diodes Incorporated FMMT417TD applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
