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FMMT413TD datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FMMT413TD
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1387
- Description: FMMT413TD datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 330mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FMMT413 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 330mW |
| Gain Bandwidth Product | 150MHz |
| Transistor Type | NPN - Avalanche Mode |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 150mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 100mA |
| Height | 1mm |
| Length | 3.05mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FMMT413TD Overview
In this device, the DC current gain is 50 @ 10mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.When VCE saturation is 150mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).For high efficiency, the continuous collector voltage must be kept at 100mA.The emitter base voltage can be kept at 6V for high efficiency.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.This device can take an input voltage of 50V volts before it breaks down.Maximum collector currents can be below 100mA volts.
FMMT413TD Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 150MHz
FMMT413TD Applications
There are a lot of Diodes Incorporated FMMT413TD applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
