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FMMT413TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FMMT413TA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 658
- Description: FMMT413TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 330mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 100mA |
| Frequency | 150MHz |
| Base Part Number | FMMT413 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 330mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Transistor Type | NPN - Avalanche Mode |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 150mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 100mA |
| Height | 1mm |
| Length | 3.05mm |
| Width | 1.4mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
FMMT413TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 10mA 10V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 1mA, 10mA.Single BJT transistor is essential to maintain the continuous collector voltage at 100mA to achieve high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 150MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.A maximum collector current of 100mA volts can be achieved.
FMMT413TA Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 150MHz
FMMT413TA Applications
There are a lot of Diodes Incorporated FMMT413TA applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
