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ContactFMM110-015X2F
MOSFET 2N-CH 150V 53A I4-PAC
- Manufacturer: IXYS / Littelfuse
- NO: 415-FMM110-015X2F
- Package: i4-Pac™-5
- Datasheet:
- Stock: 3833
- Description: MOSFET 2N-CH 150V 53A I4-PAC(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | UL RECOGNIZED, AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 180W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | FMM |
| Pin Count | 5 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| Power - Max | 180W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 55A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 8600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Drain to Source Voltage (Vdss) | 150V |
| Continuous Drain Current (ID) | 53A |
| Drain-source On Resistance-Max | 0.02Ohm |
| Pulsed Drain Current-Max (IDM) | 300A |
| Avalanche Energy Rating (Eas) | 800 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | i4-Pac™-5 |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Series | GigaMOS™, HiPerFET™, TrenchT2™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
