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FMBA56 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FMBA56
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 8044
- Description: FMBA56 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 5 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 700mW |
| Terminal Form | GULL WING |
| Current Rating | -500mA |
| Frequency | 50MHz |
| Base Part Number | FMBA56 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 700mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | -80V |
| Emitter Base Voltage (VEBO) | -4V |
| hFE Min | 100 |
| Height | 1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
FMBA56 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.The base voltage of the emitter can be kept at -4V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Parts of this part have transition frequencies of 50MHz.There is a breakdown input voltage of 80V volts that it can take.During maximum operation, collector current can be as low as 500mA volts.
FMBA56 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
FMBA56 Applications
There are a lot of ON Semiconductor FMBA56 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
