FMB857B

FMB857B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FMB857B
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 2257
  • Description: FMB857B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Max Power Dissipation 700mW
Current Rating -100mA
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 700mW
Power - Max 700mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) -5V
hFE Min 220
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package SuperSOT™-6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -45V

FMB857B Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor comes in a supplier device package of SuperSOT?-6.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

FMB857B Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
the supplier device package of SuperSOT?-6

FMB857B Applications


There are a lot of ON Semiconductor FMB857B applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

In Stock

Please send RFQ , we will respond immediately.