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FJX992TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJX992TF
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 1900
- Description: FJX992TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Weight | 30mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 235mW |
| Frequency | 100MHz |
| Base Part Number | FJX992 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 235mW |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 120V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | -300mV |
| Max Breakdown Voltage | 120V |
| Collector Base Voltage (VCBO) | -120V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 200 |
| Height | 1mm |
| Length | 2mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
FJX992TF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 6V.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 1mA, 10mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.As a result, it can handle voltages as low as 120V volts.A maximum collector current of 100mA volts is possible.
FJX992TF Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
FJX992TF Applications
There are a lot of ON Semiconductor FJX992TF applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
