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FJX945GTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJX945GTF
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 3869
- Description: FJX945GTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 150mA |
| Frequency | 300MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | FJX945 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 150mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 70 |
| Height | 900μm |
| Length | 2mm |
| Width | 1.25mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FJX945GTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1mA 6V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor can be broken down at a voltage of 50V volts.Maximum collector currents can be below 150mA volts.
FJX945GTF Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
FJX945GTF Applications
There are a lot of ON Semiconductor FJX945GTF applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
