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FJX1182YTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJX1182YTF
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 3256
- Description: FJX1182YTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Element Configuration | Single |
| Power Dissipation | 150mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | -100mV |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | -35V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 70 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 150mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -500mA |
| Frequency | 200MHz |
| Base Part Number | FJX1182 |
| Number of Elements | 1 |
FJX1182YTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -100mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.The part has a transition frequency of 200MHz.Input voltage breakdown is available at 30V volts.A maximum collector current of 500mA volts can be achieved.
FJX1182YTF Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
FJX1182YTF Applications
There are a lot of ON Semiconductor FJX1182YTF applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
