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FJV992FMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJV992FMTF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3397
- Description: FJV992FMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -120V |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -50mA |
| Frequency | 50MHz |
| Base Part Number | FJV992 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 120V |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA 6V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 120V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -300mV |
| Max Breakdown Voltage | 120V |
| Collector Base Voltage (VCBO) | -120V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 200 |
| Height | 1.04mm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FJV992FMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 1mA 6V DC current gain.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of -5V can achieve high levels of efficiency.The current rating of this fuse is -50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.50MHz is present in the transition frequency.An input voltage of 120V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 50mA volts.
FJV992FMTF Features
the DC current gain for this device is 300 @ 1mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 50MHz
FJV992FMTF Applications
There are a lot of ON Semiconductor FJV992FMTF applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
