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FJT44KTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJT44KTF
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 5616
- Description: FJT44KTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 750mV |
| Max Breakdown Voltage | 400V |
| Collector Base Voltage (VCBO) | 500V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 50 |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 188.014037mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 300mA |
| Base Part Number | FJT44 |
| Number of Elements | 1 |
| Voltage | 400V |
| Element Configuration | Single |
| Current | 3A |
| Power Dissipation | 2W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 300mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 5mA, 50mA |
FJT44KTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 10mA 10V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 750mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Input voltage breakdown is available at 400V volts.A maximum collector current of 300mA volts is possible.
FJT44KTF Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
FJT44KTF Applications
There are a lot of ON Semiconductor FJT44KTF applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
