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ContactFJPF3305H1TU
FJPF3305H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJPF3305H1TU
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 9938
- Description: FJPF3305H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Packaging | Tube |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 30W |
| Current Rating | 4A |
| Frequency | 4MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 30W |
| Case Connection | ISOLATED |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 19 @ 1A 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 4A |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 700V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 8 |
| Height | 15.87mm |
| Length | 10.16mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 2.27g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
FJPF3305H1TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 19 @ 1A 5V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 1A, 4A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A maximum collector current of 4A volts is possible.
FJPF3305H1TU Features
the DC current gain for this device is 19 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
FJPF3305H1TU Applications
There are a lot of ON Semiconductor FJPF3305H1TU applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
