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FJP5200OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJP5200OTU
- Package: TO-220-3
- Datasheet:
- Stock: 5250
- Description: FJP5200OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Weight | 1.8g |
| Operating Temperature | -50°C~150°C TJ |
| Packaging | Tube |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 80W |
| Frequency | 30MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 100W |
| Power - Max | 80W |
| Gain Bandwidth Product | 30MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 3V |
| Max Collector Current | 17A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V |
| Current - Collector Cutoff (Max) | 5μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Base Voltage (VCBO) | 250V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 55 |
| RoHS Status | RoHS Compliant |
FJP5200OTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.A maximum collector current of 17A volts is possible.
FJP5200OTU Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
FJP5200OTU Applications
There are a lot of ON Semiconductor FJP5200OTU applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
