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FJP2160DTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJP2160DTU
- Package: TO-220-3
- Datasheet:
- Stock: 7048
- Description: FJP2160DTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~125°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | ESBC™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 100W |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN FET AND DIODE |
| Power - Max | 100W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 800V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 400mA 3V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 330mA, 1A |
| Collector Emitter Breakdown Voltage | 800V |
| Gate to Source Voltage (Vgs) | 20V |
| Transition Frequency | 25MHz |
| Frequency - Transition | 5MHz |
| Collector Base Voltage (VCBO) | 1.6kV |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 20 |
| Height | 15.95mm |
| Length | 9.9mm |
| Width | 4.5mm |
| Radiation Hardening | No |
FJP2160DTU Overview
In this device, the DC current gain is 20 @ 400mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 330mA, 1A.Keeping the emitter base voltage at 12V allows for a high level of efficiency.In this part, there is a transition frequency of 25MHz.In extreme cases, the collector current can be as low as 2A volts.
FJP2160DTU Features
the DC current gain for this device is 20 @ 400mA 3V
the vce saturation(Max) is 750mV @ 330mA, 1A
the emitter base voltage is kept at 12V
a transition frequency of 25MHz
FJP2160DTU Applications
There are a lot of ON Semiconductor FJP2160DTU applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
