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ContactFJP13007H1TU-F080
FJP13007H1TU-F080 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJP13007H1TU-F080
- Package: TO-220-3
- Datasheet:
- Stock: 2833
- Description: FJP13007H1TU-F080 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2017 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 80W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A 5V |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 2A, 8A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Current - Collector (Ic) (Max) | 8A |
| Transition Frequency | 4MHz |
| Frequency - Transition | 4MHz |
| Collector Base Voltage (VCBO) | 700V |
| Power Dissipation-Max (Abs) | 80W |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 5 |
FJP13007H1TU-F080 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 2A 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.An emitter's base voltage can be kept at 9V to gain high efficiency.In the part, the transition frequency is 4MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
FJP13007H1TU-F080 Features
the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJP13007H1TU-F080 Applications
There are a lot of ON Semiconductor FJP13007H1TU-F080 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
