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FJN3303FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJN3303FTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 3634
- Description: FJN3303FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 650mW |
| Terminal Position | BOTTOM |
| Frequency | 4MHz |
| Base Part Number | FJN3303 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 650mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 500mA, 1.5A |
| Collector Emitter Breakdown Voltage | 400V |
| Transition Frequency | 4MHz |
| Max Breakdown Voltage | 400V |
| Collector Base Voltage (VCBO) | 700V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 14 |
| Turn Off Time-Max (toff) | 4700ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
FJN3303FTA Overview
DC current gain in this device equals 14 @ 500mA 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 500mA, 1.5A.The base voltage of the emitter can be kept at 9V to achieve high efficiency.The part has a transition frequency of 4MHz.An input voltage of 400V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 1.5A volts.
FJN3303FTA Features
the DC current gain for this device is 14 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJN3303FTA Applications
There are a lot of ON Semiconductor FJN3303FTA applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
