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FJN3301RTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJN3301RTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 5163
- Description: FJN3301RTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Frequency - Transition | 250MHz |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 20 |
| Continuous Collector Current | 100mA |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| HTS Code | 8541.21.00.95 |
| Subcategory | BIP General Purpose Small Signal |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 300mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 100mA |
FJN3301RTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 10mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).In the part, the transition frequency is 250MHz.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 100mA volts is possible.
FJN3301RTA Features
the DC current gain for this device is 20 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 250MHz
FJN3301RTA Applications
There are a lot of ON Semiconductor FJN3301RTA applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
