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FJL4215OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJL4215OTU
- Package: TO-264-3, TO-264AA
- Datasheet:
- Stock: 6275
- Description: FJL4215OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Operating Temperature | -50°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -230V |
| Max Power Dissipation | 150W |
| Current Rating | -13A |
| Frequency | 30MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 150W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 250V |
| Max Collector Current | 17A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V |
| Current - Collector Cutoff (Max) | 5μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Collector Emitter Breakdown Voltage | 250V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Base Voltage (VCBO) | -250V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 55 |
| Height | 26mm |
| Length | 20mm |
| Width | 5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Number of Pins | 3 |
| Weight | 6.756g |
| Transistor Element Material | SILICON |
FJL4215OTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 1A 5V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Its current rating is -13A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.30MHz is present in the transition frequency.Collector current can be as low as 17A volts at its maximum.
FJL4215OTU Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -13A
a transition frequency of 30MHz
FJL4215OTU Applications
There are a lot of ON Semiconductor FJL4215OTU applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
