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FJAFS1720TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJAFS1720TU
- Package: TO-3P-3 Full Pack
- Datasheet:
- Stock: 5318
- Description: FJAFS1720TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 52 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Number of Pins | 3 |
| Weight | 6.961991g |
| Operating Temperature | -55°C~125°C TJ |
| Packaging | Tube |
| Series | ESBC™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 60W |
| Frequency | 15MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Gain Bandwidth Product | 15MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 800V |
| Max Collector Current | 12A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8.5 @ 11A 5V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 3.33A, 10A |
| Collector Emitter Breakdown Voltage | 800V |
| Gate to Source Voltage (Vgs) | 20V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Base Voltage (VCBO) | 1.7kV |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 8 |
| Height | 26.7mm |
| Length | 15.7mm |
| Width | 5.7mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
FJAFS1720TU Overview
This device has a DC current gain of 8.5 @ 11A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 250mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 3.33A, 10A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In extreme cases, the collector current can be as low as 12A volts.
FJAFS1720TU Features
the DC current gain for this device is 8.5 @ 11A 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 3.33A, 10A
the emitter base voltage is kept at 6V
FJAFS1720TU Applications
There are a lot of ON Semiconductor FJAFS1720TU applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
