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FJAFS1510ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJAFS1510ATU
- Package: TO-3P-3 Full Pack
- Datasheet:
- Stock: 1161
- Description: FJAFS1510ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Number of Pins | 3 |
| Weight | 6.962g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~125°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | ESBC™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Other Transistors |
| Max Power Dissipation | 60W |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Case Connection | ISOLATED |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 750V |
| Max Collector Current | 6A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 7 @ 3A 5V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1.5A, 6A |
| Collector Emitter Breakdown Voltage | 750V |
| Max Frequency | 1MHz |
| Transition Frequency | 15.4MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Frequency - Transition | 15.4MHz |
| Collector Base Voltage (VCBO) | 1.55kV |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 15 |
| Height | 14.5mm |
| Length | 15.5mm |
| Width | 5.5mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
FJAFS1510ATU Overview
In this device, the DC current gain is 7 @ 3A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1.5A, 6A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.As you can see, the part has a transition frequency of 15.4MHz.Collector current can be as low as 6A volts at its maximum.
FJAFS1510ATU Features
the DC current gain for this device is 7 @ 3A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1.5A, 6A
the emitter base voltage is kept at 6V
a transition frequency of 15.4MHz
FJAFS1510ATU Applications
There are a lot of ON Semiconductor FJAFS1510ATU applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
