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FJAF4210YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJAF4210YTU
- Package: TO-3P-3 Full Pack
- Datasheet:
- Stock: 2474
- Description: FJAF4210YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Packaging | Tube |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -140V |
| Max Power Dissipation | 80W |
| Current Rating | -10A |
| Frequency | 30MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 80W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 140V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 3A 4V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
| Collector Emitter Breakdown Voltage | 140V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Base Voltage (VCBO) | -200V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 50 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Number of Pins | 3 |
| Weight | 6.962g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
FJAF4210YTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 90 @ 3A 4V.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 500mA, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -10A.The part has a transition frequency of 30MHz.A maximum collector current of 10A volts can be achieved.
FJAF4210YTU Features
the DC current gain for this device is 90 @ 3A 4V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 30MHz
FJAF4210YTU Applications
There are a lot of ON Semiconductor FJAF4210YTU applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
