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FJAF4210OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJAF4210OTU
- Package: TO-3P-3 Full Pack
- Datasheet:
- Stock: 5657
- Description: FJAF4210OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -140V |
| Max Power Dissipation | 80W |
| Current Rating | -10A |
| Frequency | 30MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 80W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 140V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A 4V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
| Collector Emitter Breakdown Voltage | 140V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Base Voltage (VCBO) | -200V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 50 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Number of Pins | 3 |
| Weight | 6.962g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
FJAF4210OTU Overview
This device has a DC current gain of 70 @ 3A 4V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 500mA, 5A.Keeping the emitter base voltage at -6V can result in a high level of efficiency.The current rating of this fuse is -10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 30MHz is present in the part.When collector current reaches its maximum, it can reach 10A volts.
FJAF4210OTU Features
the DC current gain for this device is 70 @ 3A 4V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 30MHz
FJAF4210OTU Applications
There are a lot of ON Semiconductor FJAF4210OTU applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
