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FJA4310OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJA4310OTU
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 7928
- Description: FJA4310OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 140V |
| Max Power Dissipation | 100W |
| Current Rating | 10A |
| Frequency | 30MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 100W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 140V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A 4V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
| Collector Emitter Breakdown Voltage | 140V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 200V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 50 |
| Height | 20.1mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FJA4310OTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 500mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.The current rating of this fuse is 10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Collector current can be as low as 10A volts at its maximum.
FJA4310OTU Features
the DC current gain for this device is 70 @ 3A 4V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 30MHz
FJA4310OTU Applications
There are a lot of ON Semiconductor FJA4310OTU applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
