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FJA4213OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJA4213OTU
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 9217
- Description: FJA4213OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 250V |
| Max Collector Current | 17A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 1A 5V |
| Current - Collector Cutoff (Max) | 5μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Collector Emitter Breakdown Voltage | 250V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Base Voltage (VCBO) | -250V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 55 |
| Height | 19.9mm |
| Length | 15.6mm |
| Width | 4.8mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -230V |
| Max Power Dissipation | 130W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -15A |
| Frequency | 30MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 130W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | PNP |
FJA4213OTU Overview
In this device, the DC current gain is 55 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 800mA, 8A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-15A).A transition frequency of 30MHz is present in the part.A maximum collector current of 17A volts is possible.
FJA4213OTU Features
the DC current gain for this device is 55 @ 1A 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -15A
a transition frequency of 30MHz
FJA4213OTU Applications
There are a lot of ON Semiconductor FJA4213OTU applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
